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PDF Si8451DB Data sheet ( Hoja de datos )
| Número de pieza | Si8451DB | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Intertechnology | |
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R-C Thermal Model Parameters
Si8451DB_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case Drain-Top
RT1
5.5169
2.2335
RT2
41.1679
1.5319
RT3
27.0713
2.7823
RT4
11.2439
2.9523
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case Drain-Top
CT1
127.2397 u
617.7577 u
CT2
2.3084
65.0530 u
CT3
1.2574 m
2.3875 m
CT4
121.9948 m
611.1140 u
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
www.DshaetaeSt ohfetheet4sUam.ceomnumber for guaranteed specification limits.
Document Number: 68313
Revision: 19-Dec-07
www.vishay.com
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet Si8451DB.PDF ] | |
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