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PDF Si8441DB Data sheet ( Hoja de datos )
| Número de pieza | Si8441DB | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
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P-Channel 20-V (D-S) MOSFET
Si8441DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.080 at VGS = - 4.5 V
0.102 at VGS = - 2.5 V
- 20 0.128 at VGS = - 1.8 V
0.198 at VGS = - 1.5 V
0.600 at VGS = - 1.2 V
MICRO FOOT
ID (A)e
- 10.5
- 9.3
- 3.5
- 2.5
- 0.5
Qg (Typ.)
7.7 nC
Bump Side View
Backside View
FEATURES
• TrenchFET® Power MOSFET
APPLICATIONS
RoHS
COMPLIANT
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
SG
21
S
SS
36
G
DD
45
Device Marking: 8441
xxx = Date/Lot Traceability Code
D
Ordering Information: Si8441DB-T2-E1 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±5
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Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
- 10.5
- 8.4
- 4.8a, b
TA = 70 °C
- 3.9a, b
Pulsed Drain Current
IDM - 15
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 10.8
- 2.3a, b
TC = 25 °C
13
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
8.4
2.77a, b
TA = 70 °C
1.77a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Package Reflow Conditionsc
IR/Convection
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TC = 25 °C.
Document Number: 74668
S-82119-Rev. C, 08-Sep-08
Unit
V
A
W
°C
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.25
0.20
Si8441DB
Vishay Siliconix
ID = 1 A
10
TJ = 150 °C
TJ = 25 °C
0.15
0.10
125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.7
ID = 250 µA
0.6
0.5
0.4
0.3
0.05
0
25 °C
12345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0.2
- 50 - 25
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0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01 0.1
1 10 100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Limited by R DS(on)*
10
100 µs
1
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74668
S-82119-Rev. C, 08-Sep-08
www.vishay.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8441DB.PDF ] | |
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