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PDF Si8445DB Data sheet ( Hoja de datos )
| Número de pieza | Si8445DB | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
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P-Channel 20-V (D-S) MOSFET
Si8445DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.084 at VGS = - 4.5 V
0.100 at VGS = - 2.5 V
- 20 0.120 at VGS = - 1.8 V
0.155 at VGS = - 1.5 V
0.495 at VGS = - 1.2 V
ID (A)e
- 9.8
- 9.0
- 5.0
- 2.0
- 0.5
Qg (Typ.)
9.5 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SD
34
Device Marking: 8445
xxx = Date/Lot Traceability Code
Ordering Information: Si8445DB-T2-E1 (Lead (Pb)-free)
FEATURES
• TrenchFET® Power MOSFET
• Ultra Small 1.2 mm Length x 1 mm Width
• Ultra Thin 0.59 mm Height
APPLICATIONS
• Portable Devices
- Battery Management
- Low Threshold Load Switch
- Battery Protection
RoHS
COMPLIANT
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±5
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Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
- 9.8
- 7.9
- 3.9a, b
TA = 70 °C
- 3.1a, b
Pulsed Drain Current
IDM - 10
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 9.5
- 1.5a, b
TC = 25 °C
11.4
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
7.3
1.8a, b
TA = 70 °C
1.1a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Package Reflow Conditionsc
IR/Convection
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TC = 25 °C.
Document Number: 69984
S-82768-Rev. C, 17-Nov-08
Unit
V
A
W
°C
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1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.25
ID = 1 A
0.20
TJ = 150 °C
TJ = 25 °C
1
0.15
0.10
Si8445DB
Vishay Siliconix
TJ = 125 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
0.8
0.7
0.6
ID = 250 µA
0.5
0.4
0.3
0.2
- 50 - 25
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0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0.05
TJ = 25 °C
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 69984
S-82768-Rev. C, 17-Nov-08
Limited by RDS(on)*
10
100 µs
1 1 ms
10 ms
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS
Limited
100 ms, 1 s
10 s
DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8445DB.PDF ] | |
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