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PDF Si8461DB Data sheet ( Hoja de datos )
| Número de pieza | Si8461DB | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Intertechnology | |
| Logotipo |  |
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P-Channel 20-V (D-S) MOSFET
Si8461DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at VGS = - 4.5 V
- 20 0.118 at VGS = - 2.5 V
0.140 at VGS = - 1.8 V
0.205 at VGS = - 1.5 V
ID (A)a, e
- 3.7
- 3.4
- 3.1
-2
Qg (Typ.)
9.5 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SD
34
Device Marking: 8461
xxx = Date/Lot Traceability Code
Ordering Information: Si8461DB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Battery Switch
• Charger Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
www.DataSChoenetitn4uUo.ucsomDrain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VPR
IR/Convection
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 20
±8
- 3.7a
- 3a
- 2.5b
- 1.9b
- 20
- 1.5a
- 0.65b
1.8a
1.1a
0.78b
0.5b
- 55 to 150
260
260
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Unit
V
A
W
°C
Document Number: 65001
S09-1502-Rev. B, 10-Aug-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.20
10 TJ = 150 °C
0.16
0.12
TJ = 25 °C
0.08
1
0.04
Si8461DB
Vishay Siliconix
ID = 1 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.9
0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
0.8
ID = 250 µA
0.7
0.6
0.5
0.4
20
15
10
5
0.3
- 50 - 25
www.DataSheet4U.com
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by RDS(on)*
10
100 µs
1 1 ms
TA = 25 °C
Single Pulse
0.1
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65001
S09-1502-Rev. B, 10-Aug-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet Si8461DB.PDF ] | |
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