|
|
Datasheet SW25 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SW25-2 | SW Series | ETC | data |
2 | SW25-2 | Universal Heat Sink | Aavid Thermalloy | data |
3 | SW25-3 | SW Series | ETC | data |
4 | SW25-4 | SW Series | ETC | data |
5 | SW25-4 | Universal Heat Sink | Aavid Thermalloy | data |
SW2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | SW201 | Quad SPST JFET Analog Switches
DataShee
DataSheet4U.com
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com
et4U.com
DataShee
DataSheet4U.com
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com
et4U.com
DataShee
DataSheet4U.com
DataSheet4U.com
DataSheet4U.c | Analog Devices | |
2 | SW201 | Quad SPST JFET Analog Switches
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com
et4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com
et4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4U.c | Precision Monolithics | |
3 | SW201 | GaAs SPDT Switch DC-2 Ghz
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com
| MA-Com | |
4 | SW20N50 | N-channel Power MOSFET SAMWIN
SW20N50
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm
1
2
2 3
1. Gate 2. Drain 3. Source
General Descriptio | SAMWIN | |
5 | SW20N50D | N-channel MOSFET SW20N50D
Features
Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W
Device SW20N50D
Package TO-3PN
Marking SW20N50D
Remark RoHS
Absolute Maximum Ratings
Parameter Drain-Source | Seawon | |
6 | SW20N50U | MOSFET, Transistor SAMWIN
SW20N50U
N-channel TO-3P MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS | SEMIPOWER | |
7 | SW20N60 | N-channel Power MOSFET SAMWIN
SW20N60
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm
1
2
2 3 1
1. Gate 2. Drain 3. Source
General Descripti | SAMWIN |
Esta página es del resultado de búsqueda del SW25. Si pulsa el resultado de búsqueda de SW25 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |