Datasheet SW20N50U Equivalent ( PDF ) - Mosfet

SAMWIN SW20N50U N-channel TO-3P MOSFET Features - High ruggedness - RDS(ON) (Max 0.27Ω)@VGS=10V - Gate Charge (Typ 103 nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switch

SAMWIN SW20N50 N-channel Power MOSFET Features - High ruggedness MOSFET - RDS(ON) (Max 0.27Ω)@VGS=10V - Gate Charge (Max 80nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General Description This po

SW20N50D Features Low gate charge 100% avalanche tested Improved dv, dt capability RoHS compliant JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W Device SW20N50D Package TO-3PN Marking SW20N50D Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-S

SAMWIN SW20N50U N-channel TO-3P MOSFET Features - High ruggedness - RDS(ON) (Max 0.27Ω)@VGS=10V - Gate Charge (Typ 103 nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolog

SAMWIN SW20N60 N-channel Power MOSFET Features - High ruggedness MOSFET - RDS(ON) (Max 0.3Ω)@VGS=10V - Gate Charge (Max 80 nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This p