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PDF STGD10HF60KD Data sheet ( Hoja de datos )
| Número de pieza | STGD10HF60KD | |
| Descripción | Short-circuit Rugged IGBT | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STGB10HF60KD, STGD10HF60KD
STGF10HF60KD, STGP10HF60KD
10 A - 600 V - short-circuit rugged IGBT
Preliminary data
Features
■ Low on-voltage drop (VCE(sat))
■ Operating junction temperature up to 175 °C
■ Low Cres / Cies ratio (no cross conduction
susceptibility)
■ Tight parameter distribution
■ Ultrafast soft-recovery antiparallel diode
■ Short-circuit rugged
Applications
■ Motor drives
■ High frequency inverters
■ SMPS and PFC in both hard switch and
resonant topologies
3
2
1
TO-220FP
TAB
3
1
DPAK
3
2
1
TO-220
TAB
3
1
D2PAK
Figure 1. Internal schematic diagram
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1. Device summary
Order codes
Marking
STGB10HF60KDT4
GB10HF60KD
STGD10HF60KDT4
GD10HF60KD
STGF10HF60KD
GF10HF60KD
STGP10HF60KD
GP10HF60KD
Package
D2PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
Tube
August 2009
Doc ID 16136 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14
1 page  
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Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
(see Figure 2)
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Tj = 150 °C
(see Figure 2)
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 5 A,
RGE = 10 Ω, VGE = 15 V
(see Figure 2)
VCC = 390 V, IC = 5 A,
RGE = 10 Ω, VGE = 15 V
Tj = 150 °C
(see Figure 2)
Min. Typ. Max. Unit
TBD
ns
- TBD - ns
TBD
A/µs
TBD
ns
- TBD - ns
TBD
A/µs
TBD
- TBD -
TBD
ns
ns
ns
TBD
- TBD -
TBD
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
(see Figure 2)
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Tj = 150 °C
(see Figure 2)
TBD
µJ
- TBD - µJ
TBD
µJ
TBD
µJ
- TBD - µJ
TBD
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Doc ID 16136 Rev 1
5/14
5 Page 
www.DataSShTeeGt4xU1.c0oHmF60KD
Package mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
TO-220FP mechanical data
mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
L7
A
B
Dia
L6
D
L5
F1 F2
H
L2
L3
L4
Max.
4.6
2.7
2.75
0.7
1
1.70
1.5
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
7012510_Rev_J
Doc ID 16136 Rev 1
11/14
11 Page | ||
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