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PDF STL85N6F3 Data sheet ( Hoja de datos )
| Número de pieza | STL85N6F3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
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Features
STL85N6F3
N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5)
STripFET™ Power MOSFET
Preliminary Data
Type
STL85N6F3
VDSS
60 V
RDS(on)
max
ID
< 0.0057 Ω 19 A (1)
1. The value is rated according Rthj-pcb
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested
Application
■ Switching applications
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
PowerFLAT™ (6x5)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL85N6F3
Marking
85N6F3
Package
PowerFLAT™ (6x5)
Packaging
Tape and reel
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 19 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
TBD
TBD
TBD
19
76
1.3
A
A
V
ns
nC
A
5/10
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| PDF Descargar | [ Datasheet STL85N6F3.PDF ] | |
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