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PDF STS25N3LLH6 Data sheet ( Hoja de datos )
| Número de pieza | STS25N3LLH6 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
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Features
STS25N3LLH6
N-channel 30 V, 0.0025 Ω, 22 A, SO-8
STripFET™ VI DeepGATE™ Power MOSFET
Preliminary Data
Type
STS25N3LLH6
VDSS
30 V
RDS(on)
max
0.0032 Ω
ID
22 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
t(s)■ Low gate drive power losses
■ Very low switching gate charge
ducApplication
Pro■ Switching applications
leteDescription
oThis product utilizes the 6th generation of design
bsrules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
- OMOSFET exhibits the lowest RDS(on) in a standard
)package, that makes it suitable for the most
t(sdemanding DC-DC converter applications, where
high power density has to be achieved.
SO-8
Figure 1. Internal schematic diagram
olete ProducTable 1. Device summary
ObsOrder code
Marking
Packag
Packaging
STS25N3LLH6
25G3L
SO-8
Tape and reel
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
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Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 11 A,
RG=4.7 Ω, VGS=4.5 V
Figure 2
Min. Typ. Max. Unit
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD Source-drain current
22 A
ISDM(1) Source-drain current (pulsed)
88 A
VSD(2) Forward on Voltage
ISD= 22 A, VGS=0
1.1 V
trr
t(s)Qrr
cIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 22 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
Figure 4
u1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsolete Prod2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
TBD
TBD
TBD
ns
nC
A
5/11
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