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PDF AO8846 Data sheet ( Hoja de datos )
| Número de pieza | AO8846 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8846
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
General Description
The AO8846 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its
common-drain configuration. Standard Product AO8846
is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS = 20V
ID = 7.0A
(VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 4.0V)
RDS(ON) < 21mΩ (VGS = 3.1V)
RDS(ON) < 22mΩ (VGS = 2.5V)
RDS(ON) < 27mΩ (VGS = 1.8V)
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
D1
1.8KΩ
G1
1.8KΩ
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
7 5.7
ID 5.7 4.8
IDM 25
Power Dissipation A
TA=25°C
TA=70°C
PD
1.5 1.0
1.0 0.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
D2
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8846.PDF ] | |
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