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PDF AO8822 Data sheet ( Hoja de datos )
| Número de pieza | AO8822 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8822
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8822 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is suitable
for use as a uni-directional or bi-directional load
switch, facilitated by its common-drain configuration.
Standard Product AO8822 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
VDS (V) = 20V
ID = 7 A (VGS = 10V)
RDS(ON) < 21mΩ (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 4.5V)
RDS(ON) < 28mΩ (VGS = 3.6V)
RDS(ON) < 32mΩ (VGS = 2.5V)
RDS(ON) < 50mΩ (VGS = 1.8V)
TSSOP-8
Top View
D1 D2
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
7
5.7
30
1.5
0.96
-55 to 150
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
63
101
64
Max
83
130
83
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8822.PDF ] | |
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