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PDF AO8701L Data sheet ( Hoja de datos )
| Número de pieza | AO8701L | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO8701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
Features
VDS (V) = -30V
ID = -4.2A
RDS(ON) < 50mΩ (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 4.5V)
RDS(ON) < 120mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1
S2
S3
G4
8K
7A
6A
5A
TSSOP-8
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
-55 to 150
Typ
73
96
63
75
97
63
Schottky
30
3
2
40
1.4
1
-55 to 150
Max
90
125
75
90
125
75
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO8701,AO8701L
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF (Volts)
Figure 12: Schottky Forward Characteristics
250
f = 1MHz
200
150
100
50
0
0 5 10 15 20 25 30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
0.6
IF=3A
0.5
0.4
IF=1A
0.3
0.2
0.1
0
25 50 75 100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
175
100
10
1
VR=30V
0.1
0.01
0.001
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO8701L.PDF ] | |
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