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PDF HMC753LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC753LP4E | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0609
8
Typical Applications
This HMC753LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC753LP4E
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Features
Noise Figure: 1.5 dB @ 4 GHz
Gain: 17 dB
P1dB Output Power: +18 dBm
Supply Voltage: +5V @ 55 mA
Output IP3: +30 dBm
50 Ohm matched Input/Output
24 Lead Plastic 4x4mm SMT Package: 16mm2
General Description
The HMC753LP4E is a GaAs MMIC Low Noise
Wideband Amplifier housed in a leadless 4x4 mm
plastic surface mount package. The amplifier oper-
ates between 1 and 11 GHz, providing up to 16.5 dB
of small signal gain, 1.5 dB noise figure, and output
IP3 of +30 dBm, while requiring only 55 mA from a
+5V supply. The P1dB output power of up to +18
dBm enables the LNA to function as a LO driver for
balanced, I/Q or image reject mixers. The HMC-
753LP4E also features I/Os that are DC blocked and
internally matched to 50 Ohms, making it ideal for
high capacity microwave radios or VSAT applications.
This versatile LNA is also available in die form as the
HMC-ALH444.
Electrical Specifications, TA = +25° C, Vdd= +5V, Idd = 55 mA[2]
Parameter
Min.
Typ. Max. Min.
Frequency Range
1-6
Gain
14 16.5
10
Gain Variation over Temperature
0.004
Noise Figure
1.5 2
Input Return Loss
11
Output Return Loss
18
Output Power for 1 dB Compression
18
Saturated Output Power (Psat)
20
Output Third Order Intercept (IP3)
30
Supply Current (Idd)
(Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.)
55
Typ.
6 - 11
14
0.008
2
8
12
15
17
28
55
Max.
2.7
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 366
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
www.DataSheet4U.com
8
Pin Descriptions
Pin Number
Function
1, 2, 4 - 7, 12 - 15,
17 - 19, 24
GND
3 RFIN
8, 9 Vgg2, 1
v01.0609
HMC753LP4E
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Description
Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
This pad is AC coupled
and matched to 50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Interface Schematic
10
11, 20 - 23
16
Vdd
N/C
RFOUT
Power Supply Voltage for the amplifier. See assembly for
required external components.
This pad is AC coupled and matched to
50 Ohms.
Application Circuit
8 - 370
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC753LP4E.PDF ] | |
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