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PDF STL9N3LLH5 Data sheet ( Hoja de datos )
| Número de pieza | STL9N3LLH5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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STL9N3LLH5
N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3)
STripFET™ V Power MOSFET
Features
Type
STL9N3LLH5
VDSS
30 V
RDS(on)
max
< 0.019 Ω
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
ID
9 A (1)
Applications
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™(3.3x3.3)
(Chip scale package)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL9N3LLH5
Marking
9N3L
Package
PowerFLAT™ (3.3x3.3)
Packaging
Tape and reel
July 2009
Doc ID 16012 Rev 1
1/12
www.st.com
12
1 page  
www.DataSShTeeLt94UN.3coLmLH5
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 9 A, VGS=0
ISD= 9 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
- 9A
- 36 A
- 1.1 V
21
- 10
1
ns
nC
A
Doc ID 16012 Rev 1
5/12
5 Page 
www.DataSShTeeLt94UN.3coLmLH5
5 Revision history
Table 8. Document revision history
Date
Revision
09-Jul-2009
1 First release
Revision history
Changes
Doc ID 16012 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STL9N3LLH5.PDF ] | |
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