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PDF STGD10NC60SD Data sheet ( Hoja de datos )
| Número de pieza | STGD10NC60SD | |
| Descripción | 10A - 600V Fast IGBT | |
| Fabricantes | ST Microelectronics | |
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STGD10NC60SD
STGF10NC60SD
10 A - 600 V fast IGBT
Features
■ Very low on-voltage drop (VCE(sat))
■ Very soft ultra fast antiparallel diode
■ Minimum power losses at 5 kHz in hard
switching
■ Optimized performance for medium operating
frequencies
Application
■ Medium frequency motor control
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGD10NC60SDT4
GD10NC60SD
STGF10NC60SD
GF10NC60SD
Package
DPAK
TO-220FP
Packaging
Tape and reel
Tube
July 2009
Doc ID 15847 Rev 1
1/12
www.st.com
12
1 page  
www.DataSShTeeGt4DU1.c0oNmC60SD, STGF10NC60SD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Figure 4
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TJ= 125°C
Figure 4
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
Figure 4
Vcc = 390 V, IC = 5 A,
RG = 10 Ω, VGE = 15 V,
TJ = 125°C
Figure 4
Min. Typ. Max. Unit
19 ns
- 4 - ns
1330
A/µs
18 ns
- 4.5 - ns
1000
A/µs
100 ns
- 160 - ns
205 ns
165 ns
- 250 - ns
310 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
Figure 2
VCC = 390 V, IC = 5 A
RG= 10 Ω, VGE= 15 V,
TJ= 125°C
Figure 2
50 µJ
- 290 - µJ
340 µJ
73 µJ
- 485 - µJ
558 µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature
2. Turn-off losses included also include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
Min Typ. Max. Unit
VF Forward on-voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
IF=5 A
IF=5 A, TJ=125 °C
IF=5 A, VR=40 V,
di/dt=100 A/µs
Figure 5
2
--
1.6
V
V
22 ns
- 14 - nC
1.3 A
IF=5 A, VR=40 V,
35 ns
TJ=125 °C, di/dt=100 A/µs - 40 - nC
(Figure 5
2.2 A
Doc ID 15847 Rev 1
5/12
5 Page 
www.DataSShTeeGt4DU1.c0oNmC60SD, STGF10NC60SD
6 Revision history
Table 9. Document revision history
Date
Revision
06-Jul-2009
1 Initial release
Revision history
Changes
Doc ID 15847 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STGD10NC60SD.PDF ] | |
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