|
|
PDF BYV410-600 Data sheet ( Hoja de datos )
| Número de pieza | BYV410-600 | |
| Descripción | Enhanced Ultrafast Dual Rectifier Diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BYV410-600 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
BYV410-600
www.DataSheet4U.com
Enhanced ultrafast dual rectifier diode
Rev. 01 — 29 June 2009
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High thermal cycling performance
Low on state losses
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
1.3 Applications
Dual mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
VRRM
repetitive peak
reverse voltage
IO(AV)
average output
current
Dynamic characteristics
trr reverse recovery
time
Qr recovered charge
Static characteristics
VF forward voltage
Conditions
square-wave pulse; δ = 0.5;
Tmb ≤ 92 °C; both diodes
conducting; see Figure 1;
see Figure 2
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs
IF = 10 A; Tj = 150 °C
IF = 10 A; Tj = 25 °C;
see Figure 4
Min Typ Max Unit
- - 600 V
- - 20 A
- 20 35 ns
- 15 28 C
- 1.3 1.9 V
- 1.4 2.1 V
1 page  
NXP Semiconductors
www.DataSheet4U.com
BYV410-600
Enhanced ultrafast dual rectifier diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
trr reverse recovery time
IRM peak reverse recovery
current
VFR forward recovery
voltage
Conditions
IF = 10 A; Tj = 150 °C
IF = 10 A; Tj = 25 °C; see Figure 4
VR = 600 V
VR = 600 V; Tj = 100 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
see Figure 5
IF = 1 A; dIF/dt = 100 A/µs; see Figure 6
Min Typ Max Unit
- 1.3 1.9 V
- 1.4 2.1 V
- 13 50 µA
- 1 1.5 mA
- 15 28 C
- 20 35 ns
- 1.4 1.9 A
- 3.2 - V
12
IF
(A)
8
4
003aad261
(1) (2)
(3)
0
0123
VF (V)
IF
dlF
dt
trr
time
25 %
Qr 100 %
IR IRM
003aac562
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
BYV410-600_1
Product data sheet
Rev. 01 — 29 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BYV410-600.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BYV410-600 | Enhanced Ultrafast Dual Rectifier Diode | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |