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PDF PSMN004-60B Data sheet ( Hoja de datos )
| Número de pieza | PSMN004-60B | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
Rev. 01 — 26 April 2002
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PSMN004-60P in SOT78 (TO-220AB)
PSMN004-60B in SOT404 (D2-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
s OR-ing applications.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
mb
source (s)
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
g
MBB076
d
s
1 page  
Philips Semiconductors
www.DataSheet4U.com
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf all time
Source-drain diode
ID = 75 A; VDD = 48 V; VGS = 10 V;
Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
VDD = 15 V; ID = 12 A; VGS = 10 V;
RG = 6 Ω; resistive load
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
Min Typ Max Unit
60 - - V
54 - - V
234V
1- - V
- - 4.4 V
-
0.02 1
µA
- - 500 µA
- 10 100 nA
- 3.1 3.6 mΩ
- 6.5 7.55 mΩ
- 168 - nC
- 36 - nC
- 54 - nC
- 8300 - pF
- 1050 - pF
- 550 - pF
- 38 - ns
- 74 - ns
- 133 - ns
- 75 - ns
- 0.8 1.2 V
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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Philips Semiconductors
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PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
01 20020426 -
Product data; initial version
9397 750 09156
Product data
Rev. 01 — 26 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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