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PDF PSMN004-36P Data sheet ( Hoja de datos )
| Número de pieza | PSMN004-36P | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Rev. 01 — 19 November 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN004-36P in SOT78 (TO-220AB)
PSMN004-36B in SOT404 (D2-PAK).
2. Features
s Very low on-state resistance
s Fast switching.
3. Applications
s DC to DC converters
s Switch mode power supplies.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
[1]
mb
mb
source (s)
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
g
MBB076
d
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
1 page  
Philips Semiconductors
www.DataSheet4U.com
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr turn-on rise time
td(off)
turn-off delay time
tf turn-off fall time
Source-drain diode
ID = 75 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11
VDD = 15 V; RD = 1.2 Ω; VGS = 5 V; RG = 6 Ω;
resistive load
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
VSD source-drain (diode forward) voltage IS = 75 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
36 − − V
32 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
− 0.05 10 µA
− − 500 µA
− 1 100 nA
− 4 5 mΩ
− − 9.25 mΩ
− − 5.4 mΩ
− 3.5 4 mΩ
− 97 − nC
− 20 − nC
− 39 − nC
− 6000 − pF
− 1700 − pF
− 1400 − pF
− 45 − ns
− 220 − ns
− 435 − ns
− 320 − ns
− 0.85 1.2 V
− 1.1 − V
− 400 − ns
− 1 − µC
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
01 20011119
Product Data; Initial Version
9397 750 08621
Product data
Rev. 01 — 19 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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