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PDF MSAGX60F60A Data sheet ( Hoja de datos )
| Número de pieza | MSAGX60F60A | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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MSAGX60F60A
MSAHX60F60A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAH(G)60F60B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (MSAHX60F60A only)
600 Volts
60 Amps
2.9 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current, pulse width limited by Tjmax,
Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive
load), RG= 4.7Ω, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHX60F60A only)
Pulse Source Current (Body Diode, MSAHX60F60A only)
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM
Imax
PD
Tj
Tstg
IS
ISM
θJC
Mechanical Outline
MAX.
600
600
+/-20
+/-30
60
32
120
64
300
-55 to +150
-55 to +150
32
100
0.4
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Watts
°C
°C
Amps
Amps
°C/W
COLLECTOR
EMITTER
(MS…A)
GATE (MS…B)
.A)
EMITTER (MS…B)
Datasheet# MSC0298A
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSAGX60F60A.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MSAGX60F60A | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Microsemi Corporation |
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