|
|
PDF ALD114813 Data sheet ( Hoja de datos )
| Número de pieza | ALD114813 | |
| Descripción | (ALD114813 / ALD114913) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS | |
| Fabricantes | Advanced Linear Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ALD114813 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD
ENA
®
B
L
E
D
ALD114813/ALD114913
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -1.30V
GENERAL DESCRIPTION
APPLICATIONS
ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETS matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
These MOSFETS are designed for exceptional device electrical characteristics
matching. As these devices are on the same monolithic chip, they also exhibit
excellent temperature tracking characteristics. They are versatile as design com-
ponents for a broad range of analog applications, and they are basic building
blocks for current sources, differential amplifier input stages, transmission gates,
and multiplexer applications. Besides matched pair electrical characteristics, each
individual MOSFET also exhibits well controlled parameters, enabling the user to
depend on tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying appli-
cations in single 1.5V to +/-5V systems where low input bias current, low input
capacitance and fast switching speed are desired. These devices exhibit well
controlled turn-off and sub-threshold charactersitics and therefore can be used in
designs that depend on sub-threshold characteristics.
The ALD114813/ALD114913 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user, for
most applications, connect the V+ pin to the most positive voltage and the V- and
IC pins to the most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -1.30V +/- 0.04V
• Nominal RDS(ON) @VGS=0.0V of 1.3KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
PIN CONFIGURATIONS
ALD114813
V-
IC* 1
GN1
DN1
S12
V-
DN4
GN4
IC*
2
M1
3
4
5 V-
6 M4
7
8 V-
V-
16 IC*
M2
V+
15 GN2
14 DN2
13 V+
12 S34
M 3 11 DN3
10 GN3
V- 9 IC*
SCL, PCL PACKAGES
ALD114913
V-
IC* 1
V-
8 IC*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
1 page  
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
5
TA = +25°C
4
VGS-VGS(TH)=+5V
VGS-VGS(TH)=+4V
3
2
1
0
0
VGS-VGS(TH)=+3V
VGS-VGS(TH)=+2V
VGS-VGS(TH)=+1V
2 46 8
DRAIN-SOURCE ON VOLTAGE (V)
10
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
2500
TA = 25°C
2000
1500
1000
VGS = VGS(TH) +4V
500
0
10
VGS = VGS(TH) +6V
100 1000
DRAIN-SOURCE ON CURRENT (µA)
10000
FORWARD TRANSFER CHARACTERISTICS
20
15
10
5
0
-4
TA = 25°C
VDS = +10V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
VGS(TH) = 0.0V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
VGS(TH) = +0.8V
-2 0
2
4
6
8
GATE-SOURCE VOLTAGE (V)
10
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
-50
-25 0
25 50 75 100
AMBIENT TEMPERATURE (°C)
125
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
10000
TA = +25°C
VDS=+0.1V
VGS(TH)=0.0V
1000
100
VGS(TH)=-1.3V
10
1
0.1
0.01
VGS(TH)=-3.5V
VGS(TH)=+0.2V VGS(TH)=+0.8V
-4 -3 -2 -1 0 1 2
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
1000
100
VDS=0.1V
Slope~= 110mV/decade
10
1
0.1
0.01
VGS(th)
-0.5
VGS(th)
-0.4
VGS(th)
-0.3
VGS(th)
-0.2
VGS(th)
-0.1
GATE-SOURCE VOLTAGE (V)
VGS(th)
ALD114813/ALD114913
Advanced Linear Devices
5 of 11
5 Page 
PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E E1
D
S
b
b1
A2 A
A1 L
e
Dim
A
A1
A2
b
b1
c
D-8
E
E1
e
e1
L
S-8
ø
Millimeters
Min
3.81
Max
5.08
0.38
1.27
1.27
2.03
0.89
1.65
0.38
0.51
0.20
0.30
9.40
11.68
5.59
7.11
7.62
8.26
2.29
2.79
7.37
7.87
2.79
3.81
1.02
2.03
0° 15°
Inches
Min
0.105
Max
0.200
0.015
0.050
0.050
0.080
0.035
0.065
0.015
0.020
0.008
0.012
0.370
0.460
0.220
0.280
0.300
0.325
0.090
0.110
0.290
0.310
0.110
0.150
0.040
0.080
0° 15°
c
e1 ø
ALD114813/ALD114913
Advanced Linear Devices
11 of 11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ALD114813.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ALD114813 | (ALD114813 / ALD114913) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS | Advanced Linear Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |