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PDF AWT6223R Data sheet ( Hoja de datos )
| Número de pieza | AWT6223R | |
| Descripción | WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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AWT6223R
WCDMA/GSM/GPRS/Polar EDGE
Power Amplifier Module
with Integrated Power Control
features
Data Sheet - Rev 2.0
• InGaP HBT Technology
• Optimized for a 50 System
InGaP HBT MMIC technology to provide reliability,
• Internal Reference Voltage
temperature stability, and ruggedness. This penta-
• Integrated GSM/EDGE Power Control with Tem- band module consists of three amplifier chains; one
perature Compensation
to support GSM/GPRS/EGPRS in cellular bands, one
• Low Profile Surface Mount Package:
to support GSM/GPRS/EGPRS in DCS/PCS bands,
6 mm x 8 mm x 1 mm
and one to support WCDMA in the IMT band. In ad-
• RoHS Compliant Package, 250 oC MSL-3
dition, the AWT6223R module includes an internal
WCDMA MODE
• HSDPA Compliant
• High Efficiency:
41% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
• Low Quiescent Current: 12 mA
reference voltage and integrated power control with
temperature compensation for use in GMSK and
8-PSK modes of operation. These features facilitate
fast and easy production calibration, minimize per-
formance variation over temperature, and reduce the
number of external components required.
•
•
•
Low Leakage Current in Shutdown Mode: <1 A
Internal Voltage Regulator Eliminates the Need for
External Reference Voltage
VEN = +2.4 V (+2.2 V min over Temp)
The WCDMA PA incorporates ANADIGICS’ HELP2TM
technology. Through selectable bias modes, the
AWT6223R achieves optimal efficiency across
different output power levels, specifically at low
GMSK MODE
and mid-range power levels where the PA typically
• +35 dBm GSM850/900 Output Power
operates, thereby dramatically increasing handset
• +33 dBm DCS/PCS Output Power
talk-time and standby-time. Its built-in voltage regulator
• 55 % GSM850/900 PAE
eliminates the need for an external reference voltage
• 50 % DCS/PCS PAE
and switch components, reducing PCB area and BOM
• Power Control Range > 50 dB
costs. All of the RF ports for this device are internally
• EGPRS Capable (class 12)
matched to 50 . The RF inputs GSM_IN and DCS/
EDGE MODE
PCS_IN both have shunt resistors to ground to main-
• +29 dBm GSM850/900 Output Power
tain a good input VSWR as the VRAMP power control
• +28.5 dBm DCS/PCS Output Power
voltage is varied. Internal DC blocks are provided at
• 27 % GSM850/900 PAE
the RF outputs.
• 30 % DCS/PCS PAE
• -63 dBc/30 kHz Typical ACPR (400 kHz)
• -77 dBc/30 kHz Typical ACPR (600 kHz)
CEXT2
APPLICATIONS
• 3G Handsets, Smartphones, Data Devices Incor-
porating:
WCDMA_IN
VMODE
VEN
1
2
3
22
Voltage Regulator
and Bias Control
21 VCC_WCDMA
20 WCDMA_OUT
19 GND
• WCDMA (IMT)
DCS/PCS_IN 4
18 DCS/PCS_OUT
• GSM850/GSM900/DCS/PCS Bands
• GMSK and 8-PSK (Open Loop Polar)
Modulations
BS
TX_EN
VBATT
5
6
7
CMOS Bias/Power
Controller
17 GND
16 GND
15 CEXT3
PRODUCT DESCRIPTION
The AWT6223R WEDGE module supports dual, tri,
or quad band operation using GMSK/GPRS and
8-PSK (open loop polar) modulations, and WCDMA
operation in the IMT band. The AWT6223R mod-
ule is manufactured using ANADIGICS’ advanced
CEXT1
8
14 GND
VRAMP
9
13 GND
GSM850/900_IN 10
11
12 GSM850/900_OUT
VCC_GSM
Figure 1: Block Diagram
11/2008
1 page  
AWT6223R
Table 6: Electrical Characteristics for GSM850 GMSK Mode
(Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%,
www.DataSheeZtI4NU=.cZomOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VEN = LOW)
ParaMeter
MIN tYP MaX uNIt
COMMeNts
Operating Frequency (Fo) 824 - 849 MHz
Input Power
0 3 5 dBm
Output Power, PMAX
34.5 35 - dBm Freq = 824 to 849 MHz
Degraded Output Power
32.0 32.5 -
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
PAE @ PMAX
48 52
-
% Freq = 824 to 849 MHz
Forward Isolation 1
- -42 -30 dBm TX_EN = LOW, PIN = 5 dBm
Forward Isolation 2
- -25 -20 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm
Cross Isolation
2Fo @ DCS/PCS port
3Fo @ DCS/PCS port
-
-
-36
-25
-20
-20
dBm VRAMP =0.2V to VRAMP_MAX
Second Harmonic
- -20 -10 dBm Over all output power levels
Third Harmonic
- -30 -10 dBm Over all output power levels
n x Fo (n > 4),
Fo 12.75 GHz
- -30 -10 dBm Over all output power levels
Stability
VSWR = 8:1 All Phases , POUT < 34.5 dBm
- - -36 dBm FOUT < 1 GHz
- - -30 dBm FOUT > 1 GHz
Ruggedness
No Permanent Degradation,
VSWR 10:1, All Phase Angles
POUT < 34.5 dBm
RX Noise Power
-
-86
-83
dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
Input Return Loss
- 1.5:1 2.5:1 VSWR Over all output power levels
Data Sheet - Rev 2.0
11/2008
5
5 Page 
Table 12: WCDMA Operating Conditions
AWT6223R
wwPwa.DrataaSMheeett4eUr.com
Case temperature (TC)
MIN tYP MaX uNIts
-20 - 85 °C
COMMeNts
Supply Voltage (VCC)
+3.2 +3.4 +4.2
V POUT < +28.5 dBm
WCDMA Enable Voltage (VEN)
+2.2
0
+2.4 +3.1
- +0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.2 +2.4 +3.1
0 - +0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT)
3GPP
HSDPA Case A
HSDPA Case B
HSDPA Case C
+28.0 (1)
+27.0 (1)
+26.0 (1)
+25.5 (1)
+28.5
+27.5
+26.5
+26.0
-
-
-
-
dBm
1/15 < c/d < 12/15
13/15 < c/d < 15/8
15/7 < c/d < 15/0
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) WCDMA operation at VCC = +3.2 V, Pout is derated by 0.5 dB.
(2) Do not apply a DC voltage to the WCDMA_IN RF input.
Table 13: WCDMA Bias Control
aPPLICatION
POut
LeveLs
LOGIC
veN
WCDMA - low power
<+16 dBm
Low +2.4 V
WCDMA - high power
>+16 dBm
High +2.4 V
Shutdown
-
Notes:
1. For WCDMA operation set TX_EN = LOW.
Shutdown 0 V
vMODe
+2.4 V
0V
0V
Data Sheet - Rev 2.0
11/2008
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet AWT6223R.PDF ] | |
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