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PDF STG3P3M25K120 Data sheet ( Hoja de datos )
| Número de pieza | STG3P3M25K120 | |
| Descripción | IGBT Modules | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Features
■ Low on-voltage drop (VCE(sat))
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Frequency operation up to 40 kHz
■ New generation products with tighter
parameter distribution
■ One screw mounting
■ Compact design
■ Semitop®3 is a trademark of Semikron
■ Short-circuit rugged
Applications
■ Inverters
■ Motor drive
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBT, with outstanding
performance.
STG3P3M25K120
Tri-phase inverter
IGBT - SEMITOP®3 module
Preliminary data
SEMITOP®3
Figure 1. Internal schematic diagram
1
23
89
12 13
7 14
15 16
20
19
24
23
26
25
21 22
Scheme_semitop3
Table 1. Device summary
Order code
Marking
STG3P3M25K120
G3P3M25K120
Package
SEMITOP®3
Packaging
Semibox
June 2009
Doc ID 15914 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
1 page  
www.DataSShTeeGt43UP.c3oMm25K120
Table 6.
Symbol
Switching on/off (continued)
Parameter
Test conditions
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 760 V, IC = 20 A
RG= 10 Ω, VGE= ±15 V,
Figure 4
VCC = 760 V, IC = 20 A
RG= 10 Ω, VGE= ±15 V,
Ts=125 °C, Figure 4
Electrical characteristics
Min. Typ. Max. Unit
70 ns
- 251 - ns
260 ns
140 ns
- 324 - ns
432 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 760 V, IC = 20 A
RG= 10 Ω, VGE= ±15 V,
Figure 4
VCC = 760 V, IC = 20 A
RG= 10 Ω, VGE= ±15 V,
Ts=125 °C, Figure 4
2.4 mJ
- 4.3 - mJ
6.7 mJ
3.9 mJ
- 5.8 - mJ
9.7 mJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2. Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
VF Forward on-voltage
IF = 20 A
IF = 20 A, Ts = 125 °C
trr Reverse recovery time
ta IF = 20 A,VR = 27 V,
Qrr Reverse recovery charge di/dt = 100 A/µs
Irrm Reverse recovery current Figure 4
S Softness factor of the diode
-
-
trr Reverse Recovery Time
ta IF = 20 A,VR = 27 V,
Qrr Reverse recovery charge Ts =125 °C, di/dt = 100 A/µs -
Irrm Reverse recovery current Figure 4
S Softness factor of the diode
Typ. Max. Unit
2.0 2.5 V
1.5 V
84
TBD
235
5.6
TBD
ns
ns
nC
A
152
TBD
722
9
TBD
ns
ns
nC
A
Doc ID 15914 Rev 1
5/11
5 Page 
www.DataSShTeeGt43UP.c3oMm25K120
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Doc ID 15914 Rev 1
11/11
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