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PDF PMEG4005CT Data sheet ( Hoja de datos )
| Número de pieza | PMEG4005CT | |
| Descripción | 500 MA Low Vf Dual MEGA Schottky Barrier Rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG4005CT
500 mA low VF dual MEGA Schottky barrier rectifier
Rev. 01 — 5 June 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
1.2 Features
I Average forward current: IF(AV) ≤ 0.5 A
I Reverse voltage: VR ≤ 40 V
I Low forward voltage
I AEC-Q101 qualified
I Small SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I High-speed switching
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 85 °C
[1] -
-
0.5
Tsp ≤ 130 °C
- - 0.5
VR reverse voltage
VF forward voltage
IF = 0.5 A
- - 40
- 410 470
IR reverse current
VR = 40 V
- 27 100
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA
1 page  
w w wN.XDPa St aemS hiceoentd4uUct.ocrosm
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.5
0.25
0.1
0.02
0
0.75
0.33
0.2
0.05
0.01
PMEG4005CT
500 mA low VF dual MEGA Schottky barrier rectifier
006aab535
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 500 mA
IR
reverse current
VR = 10 V
VR = 40 V
Cd
diode capacitance
VR = 1 V; f = 1 MHz
trr reverse recovery time
Min
-
-
-
-
-
-
-
-
[1] -
Typ
95
155
220
295
410
7
27
43
13
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
130
210
270
350
470
20
100
50
-
Unit
mV
mV
mV
mV
mV
µA
µA
pF
ns
PMEG4005CT_1
Product data sheet
Rev. 01 — 5 June 2009
© NXP B.V. 2009. All rights reserved.
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PMEG4005CT
500 mA low VF dual MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG4005CT_1
20090605
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMEG4005CT_1
Product data sheet
Rev. 01 — 5 June 2009
© NXP B.V. 2009. All rights reserved.
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