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PDF STG6684 Data sheet ( Hoja de datos )
| Número de pieza | STG6684 | |
| Descripción | High isolation dual SPST analog switch | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STG6684
High isolation dual SPDT analog switch
Features
■ Ultra high off-isolation:
-80 dB (typ) at 1 Mhz
■ Ultra low power dissipation:
ICC = 0.2 μA (max.) at TA = 85 °C
■ RPEAK on Tn = 1.30 Ω max (TA = 25 °C)
at VCC = 4.3 V
■ RPEAK on Sn = 0.55 Ω max (TA = 25 °C)
at VCC = 4.3 V
■ Wide operating voltage range:
VCC (opr) = 1.65 to 4.3 V single supply
■ 4.3 V tolerant and 1.8 V compatible threshold
on digital control input at VCC = 1.65 to 4.3 V
■ Typical bandwidth (-3 dB) at 65 MHz on Sn
channel, 58 MHz on the Tn channel
■ Latch-up performance exceeds 100 mA per
JESD 78, Class II
■ ESD performance exceeds JESD22
2000-V Human body model (A114-A)
Description
The STG6684 is a high-speed CMOS low voltage
dual analog SPDT (single pole dual throw) switch
or 2:1 multiplexer/de-multiplexer switch fabricated
in silicon gate C2MOS technology.
The STG6684 is designed to operate from 1.65 to
4.3 V, making this device ideal for portable
applications.
The SELn inputs are provided to control the
switch operation. The switch Sn is ON (connected
to common ports Dn) when the SELn input is held
low and OFF (high impedance state exists
between the two ports) when SELn is held high.
QFN10L (1.8 x 1.4 mm)
The switch Tn is “on” (connected to common port
Dn) when the SELn input is held high and “off”
(high impedance state exists between the two
ports) when SELn is held low.
Additional key features are fast switching speed,
break-before-make delay time and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits against static discharge,
giving them ESD immunity and transient excess
voltage.
Table 1. Device summary
Order code
STG6684QTR
Package
QFN10L (1.8 x 1.4 mm)
Packaging
Tape and reel
January 2008
Rev 1
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3 Maximum rating
Maximum rating
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 4. Absolute maximum ratings
Symbol
Parameter
VCC Supply voltage
VI DC input voltage
VIC DC control input voltage
VO DC output voltage
IIKC DC input diode current on control pin (VSEL < 0 V)
IIK DC input diode current (VSEL < 0 V)
IOK DC output diode current
IO DC output current
IOP DC output current peak (pulse at 1 ms, 10% duty cycle)
ICC or IGND DC VCC or ground current
PD Power dissipation at TA=70 °C(1)
TSTG Storage temperature
TL Lead temperature (10 sec)
1. Derate above 70 °C by 18.5 mW/°C
Value
-0.5 to 5.5
-0.5 to VCC + 0.5
-0.5 to 5.5
-0.5 to VCC + 0.5
−50
± 50
± 20
± 300
± 500
± 100
1120
-65 to 150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
mA
mW
°C
°C
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Electrical characteristics
Symbol Parameter
CSEL
Control pin
input
capacitance
CON,Tn
Tn port
capacitance
when the
switch is
enabled
CON,Sn
Sn port
capacitance
when the
switch is
enabled
COFF,Tn
Tn port
capacitance
when the
switch is
disabled
COFF,Sn
Sn port
capacitance
when the
switch is
disabled
Value
VCC
(V)
Test condition
TA = 25 °C
-40 to 85 °C Unit
Min Typ Max Min Max
VCC = 0 V
9
3.3 f = 1 MHz
113
3.3 f = 1 MHz
3.3 f = 1 MHz
88
85
pF
3.3 f = 1 MHz
40
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11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet STG6684.PDF ] | |
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