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PDF MRF284LSR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF284LSR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in Class A and Class AB for PCN - PCS/cellular radio
and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts PEP
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = - 29 dBc
• Typical Single - Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts CW
Power Gain = 9.5 dB
Efficiency = 45%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW
Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Document Number: MRF284
Rev. 17, 5/2006
MRF284LR1
MRF284LSR1
2000 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF284LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF284LSR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Drain - Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0)
Gate - Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Min
65
—
—
Value
- 0.5, +65
± 20
87.5
0.5
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Value
2.0
Unit
°C/W
Typ Max Unit
— — Vdc
— 1.0 μAdc
— 10 μAdc
(continued)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
1
1 page  
VSUPPLY
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R1
P1
Q1
R2 R4
+
C1
R3
VDD
R6
Q2 R5
B1
+
C9 C7 R7
B2
C8 R8
C2 C4
C11 C13
B3
R9
C10
B4 B5
VDD
+
R10 R11
C15 C16
L4
L1
RF
INPUT Z1
Z2
L3 Z10 Z11
DUT
Z3 Z4 Z5 Z6 Z7 Z8 Z9
C3
L2
C5 C6
Z12
C12
Z13 Z14
Z15
C14
RF
Z16 OUTPUT
C17
Z1 0.363″ x 0.080″ Microstrip
Z2 0.080″ x 0.080″ Microstrip
Z3 0.916″ x 0.080″ Microstrip
Z4 0.517″ x 0.080″ Microstrip
Z5 0.050″ x 0.325″ Microstrip
Z6 0.050″ x 0.325″ Microstrip
Z7 0.071″ x 0.325″ Microstrip
Z8 0.125″ x 0.325″ Microstrip
Z9 0.210″ x 0.515″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.210″ x 0.515″ Microstrip
0.235″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.02″ x 0.325″ Microstrip
0.510″ x 0.080″ Microstrip
0.990″ x 0.080″ Microstrip
0.390″ x 0.080″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″,
εr = 2.55
Figure 3. 2000 MHz Class A Test Circuit Schematic
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
5
5 Page 
www.DataSheet4U.com
B
G
1
PACKAGE DIMENSIONS
2X Q
aaa M T A M B M
B
(FLANGE)
3
2
2X D
bbb M T A M B M
2X K
N ccc M T A M B M
(LID)
EC
R
(LID)
ccc M T A M B M
HF
S
(INSULATOR)
T
SEATING
PLANE
aaa M T A M B M
M bbb M T A M B M
(INSULATOR)
CASE 360B - 05
AA
ISSUE G
NI - 360
MRF284LR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.795 0.805
B 0.225 0.235
C 0.125 0.175
D 0.210 0.220
E 0.055 0.065
F 0.004 0.006
G 0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
Q 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
5.72 5.97
3.18 4.45
5.33 5.59
1.40 1.65
0.10 0.15
14.28 BSC
1.96 2.21
5.59 6.35
9.02 9.27
9.07 9.22
3.18 3.43
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
B
A
(FLANGE)
1
B
(FLANGE)
2X D
2
2X K
bbb M T A M B M
N
(LID)
ccc M
TAM
BM
E
C
PIN 3
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
R
(LID)
ccc M T A M
H
BM
F
S
(INSULATOR)
aaa M T A M B M
CASE 360C - 05
ISSUE E
NI - 360S
MRF284LSR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
D 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53 9.78
5.72 5.97
2.67 3.94
5.33 5.59
0.89 1.14
0.10 0.15
1.45 1.70
2.16 2.92
9.02 9.27
9.07 9.22
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
RF Device Data
Freescale Semiconductor
MRF284LR1 MRF284LSR1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF284LSR1.PDF ] | |
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