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PDF HMC740ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC740ST89E | |
| Descripción | InGaP HBT Active Bias MMIC Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0209
Typical Applications
9 The HMC740ST89E is ideal for:
• Cellular/3G & WiMAX/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
HMC740ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +40 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network
General Description
The HMC740ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF or IF gain stage as well as
a PA or LO driver with up to +18 dBm output power. The
HMC740ST89E offers 15 dB of gain with a +40 dBm
output IP3 at 100 MHz, and can operate directly from
a +5V supply. The HMC740ST89E exhibits excellent
gain and output power stability over temperature,
while requiring a minimal number of external bias
components.
Electrical Specifications, Vcc = 5V, TA = +25° C
Parameter
Min. Typ.
Frequency Range
0.05 - 1
Gain
12 15
Gain Flatness
±0.1
Gain Variation over Temperature
0.003
Input Return Loss
18
Output Return Loss
18
Reverse Isolation
20
Output Power for 1 dB Compression (P1dB)
15.5 18
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
38
Noise Figure
3.5
Supply Current (Icq)
88
Max.
0.006
Min.
11
14.5
Typ.
0.05 - 3
15
±0.7
0.003
15
18
21
17
32
3.5
88
Max.
0.006
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dB
mA
9 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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v00.0209
9
Output IP3 vs. Vcc
50
40
30
20
4.5V
5.0V
5.5V
10
0
0 0.5 1 1.5 2
FREQUENCY (GHz)
2.5
3
P1dB vs. Temperature
20
15
10
+25C
+85C
-40C
5
0
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
Power Compression @ 500 MHz
20
15
10
5
0
-5
Pout
Gain
PAE
-10
-20 -17 -14 -11 -8 -5 -2 1 4 7
INPUT POWER (dBm)
HMC740ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Current vs. Temperature
140
120
+25C
+85C
-40C
100
80
60
40
4.5
4.75
5
VOLTAGE (V)
5.25
5.5
Psat vs. Temperature
20
15
10
+25C
+85C
-40C
5
0
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
Power Compression @ 2 GHz
20
15
10
5
0
-5
Pout
Gain
PAE
-10
-20 -16 -12 -8 -4
0
INPUT POWER (dBm)
4
8
9 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC740ST89E.PDF ] | |
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