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PDF CSD16323Q3 Data sheet ( Hoja de datos )
| Número de pieza | CSD16323Q3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Ciclon | |
| Logotipo |  |
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N-Channel
CICLON NexFETwww.DataSheet4U.com
™
Power
MOSFETs
CSD16323Q3
Features
Optimized for 5V gate drive
Ultra Low Qg & Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
G
S
S
S
D
D
D
D
S1
S2
S3
G4
D
8D
7D
6D
5D
Halogen Free
QFN 3.3mm x 3.3mm Plastic Package Top View
Maximum Values (TA = 25oC unless otherwise stated)
Symbol
VDS
Drain to Source Voltage
Parameter
VGS Gate to Source Voltage
ID Continuous Drain Current, TC = 25°C
Continuous Drain Current1
IDM Pulsed Drain Current, TA = 25°C2
PD Power Dissipation1
TJ, TSTG
Operating Junction and Storage Temperature Range
EAS Avalanche Energy, single pulse ID =50A, L = 0.1mH, RG = 25Ω
1. RθJA = 430C/W on 1in2 Cu (2 oz.) on 0.060” thick FR4 PCB.
2. See Figure 10
Product Summary
VDS
Qg
Qgd
RDS(on)
Vth
25
6.2
1.1
VGS = 3.0V
VGS = 4.5V
VGS = 8.0V
1.1
5.4
4.4
3.8
V
nC
nC
m
m
m
V
Value
25
+10 / -6
60
21
112
3.0
-55 to 150
125
Units
V
V
A
A
A
W
°C
mJ
RDS(ON) vs. VGS
Gate Charge
16 10
14
ID = 24A
9 VDS = 12.5V
8 ID = 24A
12
7
10 6
8
TC = 125ºC
5
6
TC = 25ºC
4
3
4
2
2
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage (V)
0
0 2 4 6 8 10 12 14
Qg - Gate Charge (nC)
Ordering Information
Type
CSD16323Q3
Package
QFN 3.3 X 3.3 Plastic Package
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
Package Media
13 inch reel
Qty
2500
Ship
Tape and Reel
www.ciclonsemi.com
1 page  
N-Channel
CICLON NexFETwww.DataSheet4U.com
™
Power
MOSFETs
CSD16323Q3
Typical MOSFET Characteristics (TA = 25oC unless otherwise stated)
1.6
1.4
ID = 24A
VGS = 10V
1.2
1.0
100
10 TC = 125ºC
TC = 25ºC
1
0.8 0.1
0.6
0.4
0.2
0.0
-75
-25 25
75
TC - Case tem perature (°C)
125
0.01
0.001
0.0001
175 0.0
0.2 0.4 0.6 0.8
VSD - Source to Drain Voltage (V)
Figure 8: On Resistance vs. Temperature
Figure 9: Typical Diode Forward Voltage
1000
1000
1.0
100 100us
10 1ms
1 Area limited
by RDS(ON)
0.1 Single pulse
RthJA=430C/W (max Cu)
0.01
0.01
0.1 1
VDS - Drain Voltage (V)
10
10ms
100ms
DC
100
Figure 10: Maximum Safe Operating Area
80
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150 175
TC - Case Tem perature (oC)
Figure 12: Maximum Drain Current vs. Temperature
© 2009 CICLON Semiconductor Device Corp., rev 2.2
All rights reserved.
100 TC = 25º C
TC = 125º C
10
1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tAV - Tim e in Avalanche (S)
1.0E-01
Figure 11: Single Pulse Unclamped Inductive
Switching
www.ciclonsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CSD16323Q3.PDF ] | |
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