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PDF CSD1616 Data sheet ( Hoja de datos )
| Número de pieza | CSD1616 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Continental Device India Limited | |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
CSD1616
TO-92
BCE
ECB
Audio Frequency Power Amplifier And Medium Speed Switching
Complementary CSB1116/1116A
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC*
Collector Dissipation
PC
Operating And Storage Junction
Tj, Tstg
Temperature Range
*PW=10ms, duty Cycle=50%
VALUE
60
50
6.0
1.0
2.0
0.75
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
ICBO
VCB=60V, IE=0
Emitter Cut off Current
IEBO
VEB=6V, IC=0
DC Current Gain
hFE(1) * IC=100mA, VCE=2V
hFE(2) * IC=1A, VCE=2V
Base Emitter On Voltage
VBE(on)* VCE=2V,IC=50mA
Collector Emitter Saturation Voltage VCE(Sat)* IC=1A, IB=50mA
Base Emitter Saturation Voltage
VBE(Sat)* IC=1A, IB=50mA
Dynamic Characteristics
Transition Frequency
ft VCE=2V,IC=100mA,
Collector Output Capacitance
Cob VCB=10V, IE=0
f=1MHz
SWITCHING TIMES
Turn on time
ton VCC=10V,IC=100mA
Storage time
tstg IB1=IB2=10mA,
Fall time
tf VBE(off)2=3V
MIN
-
-
135
81
0.60
-
-
100
-
-
-
-
TYP
-
-
-
-
-
-
-
19
0.07
0.95
0.07
hFE(1) * CLASSIFICATION
Y: 135-270 G: 200-400
L: 300-600
*Pulse Test : PW=350us, Duty Cycle=2% Pulsed
UNIT
V
V
V
A
A
W
deg C
MAX
100
100
600
-
0.70
0.30
1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
- us
- us
- us
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSD1616.PDF ] | |
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