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Número de pieza | IRLU8259PBF | |
Descripción | 25V Single N-Channel HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
VDSS
25V
PD - 97360
IRLR8259PbF
IRLU8259PbF
HEXFET® Power MOSFET
RDS(on) max Qg
8.7mΩ
6.8nC
D
S
G
S
D
G
D-Pak
I-Pak
IRLR8259PbF IRLU8259PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
25
± 20
57f
40f
230
48
24
0.32
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.15
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through
are on page 11
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12/16/08
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60
Limited By Package
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
IRLR/U8259PbF
2.5
2.0
1.5
ID = 25µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
R4R4
Ri (°C/W) τi (sec)
0.08148 0.000017
τCτ 0.88089 0.000107
τ3 τ3
τ4 τ4
1.48814 0.001018
0.69949 0.006290
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8259PbF
Orderable part number
IRLR8259PBF
IRLR8259TRPBF
IRLU8259PBF
Package Type
D-PAK
D-PAK
I-PAK
Standard Pack Note
Form Quantity
Tube/Bulk
75
Tape and 2000
Reel
Tube/Bulk
75
Qualification information†
Qualification level
Industrial††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s
Industrial qualification. IR’s Consumer qualification level is
granted by extension of the higher Industrial level.
Moisture Sensitivity Level
RoHS compliant
D-PAK
I-PAK
MS L1
(per JE DE C J-S T D-020D†††)
Not applicable
Yes
Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.48mH, RG = 25Ω, IAS = 17A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 42A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-790
Visit us at www.irf.com for sales contact information.12/08
www.irf.com
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11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRLU8259PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLU8259PBF | 25V Single N-Channel HEXFET Power MOSFET | International Rectifier |
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