(PDF) ALN68135 Datasheet - NPN SILICON LOW NOISE RF TRANSISTOR

Número de pieza	ALN68135
Descripción	NPN SILICON LOW NOISE RF TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! www.DataSheet4U.com ALN68135 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz •S212 = 12 dB Typical @ 2 GHz • Replacement for NE68135 MAXIMUM RATINGS IC 40 mA VCBO 20 V VCEO 12 V VEBO PDISS TJ TSTG θJC 1.5 V 290 mW @ TA ≤ 25 OC -65 OC to +200 OC -65 OC to +150 OC 600 OC/W PACKAGE STYLE SS35 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS ICBO VCB = 8.0 V IEBO VEB = 1.0 V hFE VCE = 8.0 V IC = 7.0 mA COB VCB = 10 V ft S212 NF GA VCE = 8.0 V VCE = 8.0 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 7.0 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 200 1.0 50 250 UNITS nA µA --- 0.2 0.7 pF 8.0 9.0 GHz 9 11 dB 1.6 2.3 11 12 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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