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PDF MRF9080LSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF9080LSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
www.datasheetsp4oeuu.rcfroocmremaamnpcleifieorf
these devices
applications in
make
26 volt
them
base
ideal for large−signal,
station equipment.
common−
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9080
Rev. 5, 12/2004
MRF9080LR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N−CHANNEL
RF POWER MOSFETs
CASE 465−06, STYLE 1
NI−780
MRF9080LR3
CASE 465A−06, STYLE 1
NI−780S
MRF9080LSR3
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
−0.5, +65
−0.5, +15
250
1.43
−65 to +150
200
Value
0.7
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRF9080LR3 MRF9080LSR3
5−1
1 page  
VGG +
C6
www.datasheet4u.com
R3
U1 R1
R2
P1
C5
R4 T1
RF
INPUT
+
C4
C3
C1
R5
R6
C2
+
C9
C7
DUT
VDD
C10 C13
C15
C14
C11 C12
C8
RF
OUTPUT
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part Description
Part Number
C1
C2
C3, C15
C4, C6
C5
C7, C8
C9
C10, C11
C12, C13
C14
P1
R1
R2
R3
R4
R5, R6
T1
U1
4.7 pF Chip Capacitor, ACCU−P (0805)
3.9 pF Chip Capacitor, ACCU−P (0805)
22 pF Chip Capacitors, ACCU−P (0805)
22 mF, 35 V Tantalum Chip Capacitors
1.0 mF Chip Capacitor, ACCU−P (0805)
5.6 pF Chip Capacitors, ACCU−P (0805)
220 mF, 63 V Electrolytic Capacitor
3.3 pF Chip Capacitors, ACCU−P (0805)
2.2 pF Chip Capacitors, ACCU−P (0805)
4.7 pF Chip Capacitor
5.0 kΩ Potentiometer CMS Cermet Multi−turn
10 Ω, 1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor (0805)
2.2 kΩ, 1/8 W Chip Resistor (0805)
1.0 kΩ, 1/8 W Chip Resistors (0805)
Bipolar NPN Transistor, SOT−23
Voltage Regulator, Micro−8
RF Connectors, Type SMA
Substrate = Taconic RF35, Thickness 0.5 mm
#08051J3R9CBT
#08051J3R9CBT
#08051J221
#T491X226K035AS4394
#08053G105ZATEA
#08051J5R18CBT
#08051J8R2CBT
#08051J2R2CBT
#100B
#3224W
#BC847ALT1
#LP2951ACDM−5.0R2
#R125510001
Manufacturer
AVX
AVX
AVX
Kemet
AVX
AVX
AVX
AVX
ATC
Bourns
ON Semiconductor
ON Semiconductor
Radial
Freescale Semiconductor
Wireless RF Product Device Data
MRF9080LR3 MRF9080LSR3
5−5
5 Page 
PACKAGE DIMENSIONS
B
www.datasheet4u.com B
(FLANGE)
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
BM
M (INSULATOR)
bbb M T A M
N (LID)
ccc M T A M
C
T
SEATING
PLANE
B M ccc M
B M aaa M
CASE 465−06
ISSUE F
NI−780
MRF9080LR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
T A M BM
S (INSULATOR)
T A M BM
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
C
3
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
B M ccc M T A M B M
S (INSULATOR)
B M aaa M T A M B M
F
CASE 465A−06
ISSUE F
NI−780S
MRF9080LSR3
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U --- 0.040
Z --- 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
--- 1.02
--- 0.76
0.127 REF
0.254 REF
0.381 REF
Freescale Semiconductor
Wireless RF Product Device Data
MRF9080LR3 MRF9080LSR3
5−11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF9080LSR3.PDF ] | |
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