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PDF SM9926CO Data sheet ( Hoja de datos )
| Número de pieza | SM9926CO | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Supec | |
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SM9926CO
Dual N-Channel Enhancement Mode MOSFET
www.datasheet4u.com
Features
Pin Description
• 20V/6A,
RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V
RDS(ON)= 34mΩ(typ.) @ VGS= 2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
S2D2
S2
G2
D1
S1
S1
G1
Top View of TSSOP − 8
(1) (8)
D1 D2
• Power Management in Notebook Computer,
Portable Equipment, and Battery Powered
Systems.
(4) (5)
G1 G2
S1
(2) (3)
S2
(6) (7)
N-Channel MOSFET
Ordering and Marking Information
SM9926C
SM9926C O :
Assembly Material
Handling Code
Temperature Range
Package Code
SM9926C
XXXXX
Package Code
O : TSSOP-8
Operating Junction Temperature Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
XXXXX - Date Code
Note : ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish;
which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-
020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and
halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed
1500ppm by weight).
SUPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © SUPEC Electronics Corp.
Rev. A.3 - Jun., 2008
1
www.supec.com.cn
1 page  
SM9926CO
Typical Characteristics (Cont.)
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20
18
16
14
12
10
8
6
4
2
0
0.0
Output Characteristics
V = 2,2.5,3,4,5,6,7,8,9,10V
GS
1.5V
1V
0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
45
40
V = 4.5V
35 GS
30
25 V =10V
GS
20
15
0 4 8 12 16 20
ID - Drain Current (A)
Transfer Characteristics
20
16
12
8
T =25oC
j
4
T =125oC
j
T =-55oC
j
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © SUPEC Electronics Corp.
Rev. A.3 - Jun., 2008
5
www.supec.com.cn
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