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PDF LET19060C Data sheet ( Hoja de datos )
| Número de pieza | LET19060C | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-97 CDMA PERFORMANCES
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET19060C
BRANDING
LET19060C
PIN CONNECTION
1
2
3
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
Value
65
-0.5 to +15
7
130
200
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
January, 24 2003
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET19060C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LET19060C | RF POWER TRANSISTORS Ldmos Enhanced Technology | STMicroelectronics |
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