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PDF STL90N3LLH6 Data sheet ( Hoja de datos )
| Número de pieza | STL90N3LLH6 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STL90N3LLH6
N-channel 30 V, 0.0028 Ω, 24 A PowerFLAT™ (6x5)
STripFET™ VI DeepGATE™ Power MOSFET
Preliminary data
Type
STL90N3LLH6
VDSS
30 V
RDS(on)
max
0.004 Ω
ID
24 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
■ Very low switching gate charge
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in a standard
package, that makes it suitable for the most
demanding DC-DC converter applications, where
high power density has to be achieved.
PowerFLAT™ ( 6x5 )
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL90N3LLH6
Marking
90N3LLH6
Package
PowerFLAT™ (6x5)
Packaging
Tape and reel
April 2009
Doc ID 15573 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/10
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STL90N3LLH6
Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
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ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 24 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A,
di/dt = 100 A/µs,
VDD=25 V
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
TBD
TBD
TBD
24
96
1.1
A
A
V
ns
nC
A
Doc ID 15573 Rev 1
5/10
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| PDF Descargar | [ Datasheet STL90N3LLH6.PDF ] | |
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