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PDF PHB160NQ08T Data sheet ( Hoja de datos )
| Número de pieza | PHB160NQ08T | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 28 January 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Standard level threshold
s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids
s DC-to-DC converters
s Uninterruptable power supplies
s General industrial applications.
1.4 Quick reference data
s VDS ≤ 75 V
s Ptot ≤ 300 W
s ID ≤ 75 A
s RDSon ≤ 5.6 mΩ.
2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
[1] mb
mb
3 source (s)
mb mounting base;
connected to drain (d)
g
MBB076
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
d
s
1 page  
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
6. Characteristics
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Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 25 A; VDD = 60 V; VGS = 10 V;
Figure 13
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 30 V; RG = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
75 -
70 -
23
1-
--
-V
-V
V
4V
-V
4.4 V
- - 1 µA
- - 500 µA
- 2 100 nA
- 4.8 5.6 mΩ
- 10.1 11.8 mΩ
- 91 - nC
- 19 - nC
- 28 - nC
- 5585 - pF
- 845 - pF
- 263 - pF
- 36 - ns
- 56 - ns
- 128 - ns
- 48 - ns
- 0.81 1.2 V
- 86 - ns
- 253 - nC
9397 750 12719
Product data
Rev. 01 — 28 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 13
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Philips Semiconductors
8. Revision history
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Table 6: Revision history
Rev Date
CPCN
Description
01 20040128 -
Product data (9397 750 12719).
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
9397 750 12719
Product data
Rev. 01 — 28 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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