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PDF APTGT200SK120G Data sheet ( Hoja de datos )

Número de pieza APTGT200SK120G
Descripción Buck chopper Fast Trench Field Stop IGBT Power Module
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! APTGT200SK120G Hoja de datos, Descripción, Manual

APTGT200SK120G
Buck chopper
Fast Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VBUS
Q1
G1
E1 OUT
CR2
0/ VBUS
G1 VBUS
E1
0/VBUS
OUT
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
280
200
400
±20
890
400A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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APTGT200SK120G pdf
APTGT200SK120G
www.datasheet4u.com
Operating Frequency vs Collector Current
60
50
ZVS
40
30 ZCS
VCE=600V
D= 50%
RG=2.7
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 40
80
120 160 200 240 280
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ =125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25 0.9
0.2 0.7
0.15 0.5
0.1 0.3
Diode
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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