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PDF AOTF3N50 Data sheet ( Hoja de datos )
| Número de pieza | AOTF3N50 | |
| Descripción | 3A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOT3N50/AOTF3N50
www.datasheet4u.com
500V, 3A N-Channel MOSFET
General Description
The AOT3N50 & AOTF3N50 have been fabricated
using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 600V @ 150°C
ID = 3A
RDS(ON) < 3Ω
(VGS = 10V)
100% UIS Tested!
100% R g Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT3N50 AOTF3N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C, G
Repetitive avalanche energy C, G
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
3
1.9
9
2
60
120
3*
1.9*
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
74 31
0.6 0.25
Junction and Storage Temperature Range TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
AOT3N50 AOTF3N50
Maximum Junction-to-Ambient A,D
Maximum Case-to-Sink A
RθJA
RθCS
65
0.5
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.7
4.0
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOT3N50 / AOTF3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1 RθJC=1.7°C/W
www.datasheet4u.com
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT3N50 (Note F)
100
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1 RθJC=4.0°C/W
200
16
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF3N50 (Note F)
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOTF3N50.PDF ] | |
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