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Número de pieza | AON4420L | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
RDS(ON) per unit area. This device is ideal for load switch
and high speed switching applications.
VDS (V) = 30V
ID = 10A
RDS(ON) < 19mΩ
RDS(ON) < 25mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
Top View
DFN 3x2
Bottom View
Pin 1
D
D
D
G
D
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Pulsed Drain Current C
VGS
IDM
Continuous Drain
Current A
TA=25°C
TA=70°C
ID
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
50
10
8
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
34
66
20
Max
40
80
25
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AON4420L
+www.datasheet4u.com
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
+
VDC Vds
DUT -
Vgs
10V
Qgs
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
td(on) tr
ton
td(off)
tf
toff
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
VDC Vdd
-
Isd
Vds
IF
dI/dt
t rr
I RM
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AON4420L.PDF ] |
Número de pieza | Descripción | Fabricantes |
AON4420L | N-Channel Enhancement Mode Field Effect Transistor | Alpha & Omega Semiconductors |
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