(PDF) CMBT3905 Datasheet - SILICON PLANAR EPITAXIAL TRANSISTORS

Número de pieza	CMBT3905
Descripción	SILICON PLANAR EPITAXIAL TRANSISTORS
Fabricantes	CDIL
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No Preview Available ! Continental Device India Limited An wISwOw/.TdSa1ta6s9h4e9eat4nud.cIoSmO 9001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 60 °C D.C. current gain –IC = 10 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V –VCBO –VCEO –VEBO –IC Ptot hFE fT max. max. max. max. max. 40 V 40 V 5V 200 mA 250 mW 50 to 150 min. 200 MHz Continental Device India Limited Data Sheet Page 1 of 3 1 page

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PDF CMBT3905 Data sheet ( Hoja de datos )