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PDF CSD1426F Data sheet ( Hoja de datos )
| Número de pieza | CSD1426F | |
| Descripción | NPN HIGH VOLTAGE SILICON POWER TRANSISTORS | |
| Fabricantes | Continental Device India Limited | |
| Logotipo |  |
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE SILICON POWER TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
CSD1426F
TO-3P Fully Isolated
Plastic Package
B
C
E
Colour TV Horizontal Output Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current -Continuous
Emitter Current
Collector Power Dissipation @ Tc=25ºC
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
VALUE
1500
600
5.0
3.5
-3.5
34
150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
Emitter Base Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Forward Voltage ( Damper Diode)
ICBO
VEBO
hFE
VCE(Sat)
VBE(sat)
-VF
VCB=500V, IE=0
IE=200mA, IC=0
IC=0.5A, VCE=5V
IC=3A, IB=0.8A
IC=3A, IB=0.8A
IF=3.5A
MIN TYP MAX
10
5.0
8
8
1.5
2.0
DYNAMIC CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Transition Frequency
fT VCE=10V, IC= 100mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
MIN TYP MAX
3
95
UNIT
V
V
V
A
A
W
ºC
ºC
UNIT
µA
V
V
V
V
UNIT
MHz
pF
SWITCHING CHARACTERISTICS
Fall Time
tf ICP=3A, IB1(end)= 0.8A
1.0 µs
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CSD1426F.PDF ] | |
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