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PDF AP70L02GP Data sheet ( Hoja de datos )

Número de pieza AP70L02GP
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP70L02GP Hoja de datos, Descripción, Manual

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Advanced Power
Electronics Corp.
AP70L02GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching
Description
G
D
S
BVDSS
RDS(ON)
ID
25V
9mΩ
66A
The Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263(S)
G
D
S
Rating
25
±20
66
42
210
66
0.53
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.9
62
Unit
/W
/W
Data & specifications subject to change without notice
200831073-1/6

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AP70L02GP pdf
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AP70L02GS/P
16
14 I D =33A
V DS =20V
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
Crss
100
1
6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
T j =150 o C
1
T j =25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6

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