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PDF 2SK3635 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3635 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3635
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3635 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3635
TO-251 (MP-3)
2SK3635-Z
TO-252 (MP-3Z)
FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A)
• Low Ciss: Ciss = 390 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
• Avalanche capability rated
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg
IAS
EAS
IAR
EAR
200
±30
±8.0
±24
24
1.0
150
–55 to +150
8
6.4
8
2.4
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch ≤ 125°C, RG = 25 Ω, VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15932EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
www.DataS1h.4eet4U.com
VGS = 10 V
1.2 Pulsed
1
ID = 8.0 A
0.8
0.6
4.0 A
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
VDD = 100 V
VGS = 10 V
RG = 0 Ω
td(off)
10 tr
tf
td(on)
1
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
100
1
0.1
0.01
0
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
2SK3635
1000
100
10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C iss
Coss
C rss
VGS = 0 V
f = 1 MHz
1
0.1 1 10 100 1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240 12
220 ID = 8.0 A
200 VDD = 160 V
180 100 V
160 40 V
10
8
140
120 6
100
VGS
80 4
60
40
20 VDS
2
00
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/µs
1 10
IF - Diode Forward Current - A
100
Data Sheet D15932EJ2V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3635.PDF ] | |
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