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PDF 2SK3633 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3633 | |
| Descripción | Silicon N-Channel MOS Type Switching Regulator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3633
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV)
www.DataSheet4U.com
2SK3633
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 640 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
800
800
±30
7
21
150
420
7
15
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15.7 mH, IAR = 7 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-10
1 page  
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2SK3633
SAFE OPERATING AREA
100
ID max (PULSED)*
10 ID max (CONTINUOUS) *
100 μs*
1 ms*
1 DC OPERATION
Tc = 25°C
*SINGLE NONREPETITIVE PULSE
0.1
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1 10
100
VDSS max
1000
10000
Drain-source voltage VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 15.7 mH
Waveform
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-10
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3633.PDF ] | |
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