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PDF ISA1989AU1 Data sheet ( Hoja de datos )
| Número de pieza | ISA1989AU1 | |
| Descripción | SMALL-SIGNAL TRANSISTOR | |
| Fabricantes | Isahaya Electronics | |
| Logotipo |  |
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DESCRIPTION
ISA1989AU1 is a ultra super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max（@ I C=-30mA ,IB=-1.5mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
OUTLINE DRAWING
0.4
1.6
0.8 0.4
Unit：ｍｍ
①
②③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
. VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
-50
-50
-6
-100
150
＋150
-55～＋150
Unit
V
V
V
mA
mW
℃
℃
JEITA：SC-75A
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
. TR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
Test conditions
I C=-100μA ,R BE=∞
V CB=-50V, I E=0mA
V EB=-4V, I C=0mA
V CE=-6V, I C=-1mA
V CE=-6V, I C=-0.1mA
I C=-30mA ,IB=-1.5mA
V CE=-6V, I E=10mA
V CE=-6V, I E=0,f=1MHz
Limits
Min Typ Max
Unit
-50 -
-V
- - -0.5 μA
- - -0.5 μA
※ 120 - 560
70 - -
- - -0.3 V
- 200 - MHz
- 2.5 - pF
※） It shows hFE classification in below table.
Item
hFE item
Q
120～270
R
180～390
S
270～560
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ISA1989AU1.PDF ] | |
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