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PDF MSAFX10N90A Data sheet ( Hoja de datos )
| Número de pieza | MSAFX10N90A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MSAFX10N90A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAFX10N90A
www.DataSheet4U.com
Features
• Ultrafast body diode
• Rugged polysilicon gate cell structure
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request
900 Volts
10 Amps
1.1 Ω
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
100°C
Tj= 25°C
Tj=
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
900
900
+/-20
+/-30
10
6
40
10
30
tbd
5.0
300
-55 to +150
-55 to +150
10
40
0.25
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
GATE
SOURCE
Datasheet# MSC0944.PDF
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MSAFX10N90A.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MSAFX10N90A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Microsemi Corporation |
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