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PDF STI23NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STI23NM60ND | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB23NM60ND-STF23NM60ND
STI23NM60ND-STP/W23NM60ND
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247
FDmesh™ II Power MOSFET (with fast diode)
Preliminary Data
Features
www.DataSheet4U.com Type
STB23NM60ND
STI23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
VDSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
RDS(on) max ID
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
< 0.180 Ω
20 A
20 A
20 A(1)
20 A
20 A
1. Limited by wire bonding
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
Package
STB23NM60ND
23NM60ND
D²PAK
STI23NM60ND
23NM60ND
I²PAK
STF23NM60ND
23NM60ND
TO-220FP
STP23NM60ND
23NM60ND
TO-220
STW23NM60ND
23NM60ND
TO-247
January 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Packaging
Tape & reel
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15
1 page  
STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND
Electrical characteristics
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Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Min. Typ. Max. Unit
25 ns
45 ns
90 ns
36 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 4)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 20 A
Tj = 150 °C (see Figure 4)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
20
80
1.3
140
0.85
12
TBD
TBD
TBD
A
A
V
ns
µC
A
ns
µC
A
5/15
5 Page 
STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND
Package mechanical data
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Dim
Min
A 4.4
A1 2.49
A2 0.03
B 0.7
B2 1.14
C 0.45
C2 1.23
D 8.95
D1
E 10
E1
G 4.88
L 15
L2 1.27
L3 1.4
M 2.4
R
V2 0°
D²PAK mechanical data
mm
Typ Max Min
4.6 0.173
2.69
0.098
0.23
0.001
0.93
0.027
1.7 0.044
0.6 0.017
1.36
0.048
9.35
0.352
8
10.4
0.393
8.5
5.28
0.192
15.85
0.590
1.4 0.50
1.75
0.055
3.2 0.094
0.4
4°
inch
Typ
0.315
0.334
0.015
Max
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.625
0.55
0.68
0.126
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| PDF Descargar | [ Datasheet STI23NM60ND.PDF ] | |
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