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PDF STI21NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STI21NM60ND | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP/F21NM60ND-STW21NM60ND
STB21NM60ND-STI21NM60ND
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET
D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Features
Type
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STB21NM60ND
STI21NM60ND
STF21NM60ND
STP21NM60ND
STW21NM60ND
VDSS @
TJmax
650 V
650 V
650 V
650 V
650 V
RDS(on)
max
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
ID
17 A
17 A
17 A(1)
17 A
17 A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in ZVS
phase-shift converters.
Table 1. Device summary
Order codes
Marking
STB21NM60ND
21NM60ND
STI21NM60ND
21NM60ND
STF21NM60ND
STP21NM60ND
21NM60ND
21NM60ND
STW21NM60ND
21NM60ND
April 2008
Rev 2
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
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1/18
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18
1 page  
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND Electrical characteristics
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Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VGS = 0
ISD = 17 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
ISD = 17 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
17
68
1.6
150
0.90
13
210
1.6
15
A
A
V
ns
µC
A
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
5/18
5 Page 
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND Package mechanical data
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TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/18
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| PDF Descargar | [ Datasheet STI21NM60ND.PDF ] | |
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