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Número de pieza | APT56M50L | |
Descripción | N-Channel MOSFET | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APT56M50L (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! APT56M50B2
APT56M50L
500V, 56A, 0.10Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
www.DataSheet4U.com
T-MaxTM
TO-264
APT56M50B2
APT56M50L
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
56
35
175
±30
1200
28
Unit
A
V
mJ
A
Min Typ Max Unit
780 W
0.16
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
12 in·lbf
1.4 N·m
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet APT56M50L.PDF ] |
Número de pieza | Descripción | Fabricantes |
APT56M50B2 | N-Channel MOSFET | Microsemi Corporation |
APT56M50L | N-Channel MOSFET | Microsemi Corporation |
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