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Número de pieza | IRG4PC30KDPBF | |
Descripción | INSULATED GATE BIPOALR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRG4PC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
www.DataSheet4U.com VGE = 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
G
E
n-channel
Lead-Free
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
1.2
2.5
40
Units
°C/W
g (oz)
1
7/26/04
1 page 1500
1200
www.DataSheet4U.com
900
600
VGE = 0V, f = 1MHz
CCCiroeeesss
=
=
=
CCCggceec
+
+
Cgc
Cgc
,
Cce
SHORTED
Cies
300
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PC30KDPbF
20 VCC = 400V
I C = 16A
16
12
8
4
0
0 20 40 60 80
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
1.40 IC = 16A
1.30
1.20
1.10
1.00
0
10 20 30 40
RGRG, ,GGaattee RReesistannccee ((OΩh)m)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10 RG = O23hΩm
VGE = 15V
VCC = 480V
1
IC = 32A
IC = 16A
IC = 88.0AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
www.DataSheet4U.com
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRG4PC30KDPBF.PDF ] |
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IRG4PC30KDPBF | INSULATED GATE BIPOALR TRANSISTOR | International Rectifier |
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