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Número de pieza | SI1046X | |
Descripción | N-Channel MOSFET | |
Fabricantes | Vishay Siliconix | |
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N-Channel 20-V (D-S) MOSFET
Si1046X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.420 at VGS = 4.5 V
20 0.501 at VGS = 2.5 V
0.660 at VGS = 1.8 V
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ID (A)a
0.606
0.505
0.15
Qg (Typ.)
0.92
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET: 1.8 V Rated
• ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
SC89-3L
G1
S2
3D
Marking Code
3 XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1046X-T1-E3 (Lead (Pb)-free)
Si1046X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
±8
0.606b, c
0.485b, c
2.5
0.21b, c
0.25b, c
0.16b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Symbol
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 74594
S-81543-Rev. B, 07-Jul-08
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SI1046X.PDF ] |
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